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HSBD234 TZA3034T 12CWQ1 HDMS3224 N5819 100505 LC75742W FJ256
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  smd type ic smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SC3011 features high gain :|s 21e | 2 =12db(typ.) low noise figure: nf=2.3db(typ.) f=1ghz high ft : ft=6.5ghz absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 7v emitter-base voltage v ebo 3v collector current i c 30 ma emitter current i e 10 ma collector power dissipation p c 150 mw junction temperature t j 125 storage temperature t stg -55to+125 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb =10v,i e =0 1.0 a emitter cut-off current i ebo v eb =1.0v,i c =0 1.0 a collector-emitter breakdown voltage v (br)ceo i c =0.5ma,i b =0 7 v dc current gain h fe v ce =5v,i c = 10 ma 30 120 collector-emitter saturation voltage v ce (sat) 0.1 v base-emitter saturation voltage v be (sat) 0.87 v collector output capacitance c ob 0.7 0.9 pf reverse transfer capacitance cre 0.5 pf input capacitance cib v eb =0,i c =0,f=1mhz 0.8 pf transition frequency f t v ce =5v,i c =10ma 6.5 ghz insertion gain |s 21e | 2 v ce =5v,i c =10ma,f=1ghz 12 db noise figure nf v ce =5v,i c =5ma,f=1ghz 2.3 db i c =10ma,i b =1ma v cb =5v,i e =0,f=1mhz marking marking ma 1 of 1 sales@twtysemi.com http://www.twtysemi.com smd type ic smd type smd type smd type ic smd type smd type ic smd type smd type smd type smd type ic smd type product specification 4008-318-123


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